a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982-1200 fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol test conditions (per side) minimum typical maximum units bv ceo i c = 200 ma 30 v bv cbo i c = 50 ma 45 v bv ebo i e = 10 ma 3.0 v h fe v ce = 5.0 v i c = 3.0 a 10 100 --- c ob v cb = 28 v f = 1.0 mhz 72 pf g p v ce = 26.5 v i c = 2 x 1.6 a f = 860 mhz 8.0 9.0 db g p v ce = 28 v i c = 2 x 250 ma f = 860 mhz p out = 50 w 7.0 8.0 db imd 3 v ce = 26.5 v p out = 25 w f = 860 mhz vision = -8.0db sound = -10 db chroma = -16db -45 dbc npn silicon rf power transistor SD1490 description: the asi SD1490 is a common emitter device designed for class a and ab amplifier applications in television band iv & v transmitters. features include: gold metalization emitter ballasting internal matching maximum ratings i c 8.0 a v cb 45 v p diss 155 w @ t c = 25 o c t j -55 o c to +200 o c t stg -55 o c to +200 o c q q jc 1.15 o c/w package style .450 bal flg.(a) 1 = collector 2 = base 3 = emitter
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